Cellular Monte Carlo Modeling of AlxIn1-xSb/InSb Quantum Well Transistors
نویسندگان
چکیده
In this work, an Indium Antimonide (InSb) quantum well transistor is investigated using full-band Monte Carlo simulations. The steady-state characteristic of the device is first analyzed, showing particle transport along a two-dimensional electron gas (2DEG). The small-signal behavior of the device is also investigated. Finally, a noise analysis is performed, allowing for a twodimensional mapping of the noise within the device.
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